Secondary Ion Mass Spectroscopy(SIMS)
Mass analysis surface and depth profiling
Dopant or compositional element depth analysis
Secondary Ions
Down to 1e12 at/cm3
Quadrupole Secondary Ion Mass Spectroscopy(Quad SIMS)
Thin Film and Shallow Implant Depth Profile
Dopant or compositional element depth profile
Secondary Ions
Down to 1E16 at/cm3
Auger Electron Spectroscopy(AES)
Elemental surface analysis
Depth profiling with Ar sputter, surface contamination, cross-section analysis
Auger electrons
0.1-1 at%
Electron Spectroscopy for Chemical Analysis
(aka ESCA or XPS)
Elemental Surface analysis
Depth profiling with Ar sputter, chemical state information, thin film composition analysis
Photoelectrons
0.1 at%
X-Ray Diffraction
(XRD)
Crystal Orientation Analysis
Grain size, orientation, and texture analysis
Crytal plane d-spacing
+/-.5%
X-Ray Reflection
(XRR)
Reflectivity Analysis
Density, Interfacial Roughness, and Thickness of thin films
Reflected X-rays
+/- 3% of signals detected
Atomic Force Microscopy
(AFM)
Surface topography
Roughness of thin films, and step height information
Atomic morphology
< 2 Å
Rutherford Backscattering spectrometry (RBS)
Elemental surface analysis
Thin film stoichiometry and composition and impurity analysis of films and materials
Backscattered ions
1 E 14/ cm2
Dependent on mass of target atom.
Ion Channeling
Elemental analysis and depth profiling for single crystals
Lattice location of defects and impurities in single crystal materials
Backscattered ions
1 E 14/cm2
Dependent on mass of target atom.
Micro-Raman Spectroscopy(µ-RS)
Molecular composition
Defect analysis, thin film monitoring
Bond vibration frequencies
Sample dependent
Total Reflection X-Ray Fluorescence Spectroscopy(TXRF)
Elemental composition
Trace contamination on wafer surfaces
Secondary x-ray fluorescence
1 E 9/cm2