Field Emission Scanning Electron Microscopy(FE-SEM)
Scanning electron imaging to view samples at magnifications up to 500,000 times.
Metrology, construction analysis, defect analysis
Hitachi S4800, FEI XL50
Energy Dispersive X-Ray Spectroscopy (EDS)
Elemental analysis
Defect analysis, construction analysis
NORAN System SIX
Back Scattered Electron Imaging (BSE)
Contrast imaging of wafer cross section. Provides composition information
Process identification
Hitachi S4800
Focused Ion Beam (FIB)
Sample preparation technique using ion beam to mill into very specific area of interest.
Defect analysis, construction analysis, TEM sample prep
FEI XL830, XL835 Dual Beam systems
Dualbeam-STEM (FIB)
Sample preparation technique using ion beam to mill into very specific area of interest. In-situ imaging using Scanning Transmission Electron Microscopy.
Defect analysis, construction analysis, TEM sample prep, Circuit edit
FEI Strata 400S
Transmission Electron Microscopy (TEM)
Imaging of electrons transmitted through <100 nm thick speciman.
Construction analysis, crystal phase, lattice damage and grain orientation
JEM-ARM200F
JEOL 2010
Philips (FEI) CM300
Analytical Transmission Electron Microscopy (AEM)
Elemental analysis on TEM sample.
Defect analysis, construction analysis
Gatan GIF-2002 Electron Energy Loss Spectrometer and Noran System Six EDXS